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| GaAs Foundry Services PROCESS PE3 Features * * * * * * 0.5 m MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging PE3 V2.00 Typical RF Performance FC06 (6X150) 900 um FET Param. MAG PSAT PAE ft Test Conditions VDS = 8V, IDS = .40IDSS VDS = 8V, IDS = .40IDSS VDS = 8V, IDS = .40IDSS VDS = 8V, IDS = .40IDSS Freq. 2/12GHz 2/12GHz 2/12GHz -----Typ. Val. 22/13.5dB 680/525mW/mm 50/41% 20GHz Description M/A-COM's PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz. The focus is on products for moderate to high volume applications. M/A-COM offers a full compliment of foundry services to meet the requirements for custom designing a MMICbased die or packaged product. Ordering Information Part Number FE43-0001 SVC6310 Description PE3 Wafer Mask Set Electrical Specifications: TA = +25 C Parameter 200um PCM FET IDSS DC GM Vp BVgd RF GM Cgs Cgd Cds Ft Sheet Resistances NDRS (N- GaAs) NCRS (NiCr) GFRS (Gate Metal) MIM Capacitors Capacitance/unit area Capacitor Leakage f = 1MHz V = 10V pF/mm A 2 Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 0.5IDSS VDS = 3V, IDS = 0.025IDSS IG = 0.1mA/mm VDS = 3V, IDS = 0.5IDSS VDS = 3V, IDS = 0.5IDSS VDS = 3V, IDS = 0.5IDSS VDS = 3V, IDS = 0.5IDSS VDS = 3V, IDS = 0.5IDSS l = 20mA l = 10mA l = 20mA Units mA/mm mS/mm V V mS pF pF pF GHz Ohms/sq Ohms/sq Ohms/sq Min. 180 125 -1.2 -11 25 .140 .015 .025 20 340 42 360 - Typ. 240 150 -1.8 -15 32 .200 .022 .038 26 375 50 .027 400 - Max. 310 185 -2.2 45 .280 .028 .050 34 410 58 .040 440 0.5 Specifications Subject to Change Without Notice. M/A-COM Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263-8761 Fax +81 3 3263-8769 Europe: 1 Tel. +44 (1344) 869-595 Fax +44 (1344) 300-020 GaAs Foundry Services Normalized Nominal Models Parameter IDS mA/mm gm mS/mm Cgs pF/mm Cgd pF/mm Cds pF/mm Td pS Ri Ohms-mm Gds mS/mm Ggs mS/mm Rg Ohms/mm Rs Ohms-mm Rd Ohms-mm Lg nH/Finger Ld nH/Finger Cgp pF/mm Cdp pF/mm 25% IDSS 8 VDS 62.62 140.37 1.178 0.072 0.172 5.574 2.093 9.214 0.168 47.996 0.827 0.865 0.108 0.108 0.148 0.148 50% IDSS 8 VDS 127.96 155.44 1.303 0.059 0.185 5.502 1.729 7.929 0.093 47.996 0.827 0.865 0.108 0.108 0.148 0.148 3 4 5 7 8 10 11 12 13 25 28 Process PE3 V2.00 Mask Layer Assignments LAYER PROCESS CODE OH BI RD GF GL TV OL AP AS BV FP PROCESS DESCRIPTION Ohmic Boron Isolation Resistor Deposition Gate Finger Gate Interconnect Top via Overlay Air-post Air-Span Back-via Final Passivation 29 ST Saw Street NOTE: Unused layer numbers are reserved for future use. GMAX - 900um FET Specifications Subject to Change Without Notice. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263-8761 Fax +81 3 3263-8769 Europe: M/A-COM Inc. Tel. +44 (1344) 869-595 Fax +44 (1344) 300-020 |
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